Cite
Improvement of durability and switching speed by incorporating nanocrystals in the HfOx based resistive random access memory devices.
MLA
Wu, Quantan, et al. “Improvement of Durability and Switching Speed by Incorporating Nanocrystals in the HfOx Based Resistive Random Access Memory Devices.” Applied Physics Letters, vol. 113, no. 2, July 2018, p. N.PAG. EBSCOhost, https://doi.org/10.1063/1.5030780.
APA
Wu, Q., Banerjee, W., Cao, J., Ji, Z., Li, L., & Liu, M. (2018). Improvement of durability and switching speed by incorporating nanocrystals in the HfOx based resistive random access memory devices. Applied Physics Letters, 113(2), N.PAG. https://doi.org/10.1063/1.5030780
Chicago
Wu, Quantan, Writam Banerjee, Jingchen Cao, Zhuoyu Ji, Ling Li, and Ming Liu. 2018. “Improvement of Durability and Switching Speed by Incorporating Nanocrystals in the HfOx Based Resistive Random Access Memory Devices.” Applied Physics Letters 113 (2): N.PAG. doi:10.1063/1.5030780.