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An Extremely High Efficient Three-Level Active Neutral-Point-Clamped Converter Comprising SiC and Si Hybrid Power Stages.
- Source :
-
IEEE Transactions on Power Electronics . Oct2018, Vol. 33 Issue 10, p8341-8352. 12p. - Publication Year :
- 2018
-
Abstract
- Three-level converters typically feature low switching loss and small filter size. In order to realize a high-power-density design for three-level converters, SiC MOSFETs may be selected instead of using Si insulated-gate bipolar transistors. However, all-SiC-MOSFET-based converters suffer from extremely high total cost. In this paper, a SiC MOSFET and Si device hybrid active neutral-point-clamped (ANPC) converter is proposed. It consists of four Si active switches and only two SiC MOSFETs. Thus, it has lower total cost compared to the all-SiC-MOSFET-based ANPC converter. Furthermore, a dedicated modulation scheme is proposed to completely move all the switching events from Si devices to SiC MOSFETs by using redundant switching states. As a result, the switching losses are significantly reduced and extremely high efficiency is achieved. The proposed converter has fully utilized the low-switching-loss advantage of SiC MOSFETs and the low-cost advantage of Si devices, which shows significant superiority in high-end grid-connected inverter and rectifier applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 08858993
- Volume :
- 33
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Power Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 130828549
- Full Text :
- https://doi.org/10.1109/TPEL.2017.2784821