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Growth and characterization of polycrystalline diamond films on silicon using sugarcane bagasse as carbon precursor at atmospheric pressure by thermal chemical vapor deposition.
- Source :
-
Diamond & Related Materials . Aug2018, Vol. 87, p18-26. 9p. - Publication Year :
- 2018
-
Abstract
- Here we demonstrate that by using sugarcane bagasse as a carbon precursor, highly crystalline diamond films possessing H3 [N-V-N] and [Si-V] − optical centers can be grown on Si (100) substrates using a simple thermal chemical vapor deposition (thermal-CVD) system at atmospheric pressure and reduced temperature (~900 °C). In this process, the rich chemistry of effluent gas species produced during the pyrolysis of sugarcane bagasse is found to play a vital role. Diamond films have also been characterized by using X-ray diffraction (XRD), scanning electron microscope (SEM), micro-Raman, and photoluminescence (PL) spectrometer. Presence of nitrogen and silicon related defect was probed by PL and H3, i.e. [N-V-N] at 505 nm and [Si-V] − at 736 nm optical centers have been confirmed. The other observed peaks at 445.7 nm, 468 nm, and 884 nm are assigned to nitrogen-containing defects. [ABSTRACT FROM AUTHOR]
- Subjects :
- *SUGARCANE
*BAGASSE
*CARBON
*CHEMICAL vapor deposition
*ATMOSPHERIC pressure
Subjects
Details
- Language :
- English
- ISSN :
- 09259635
- Volume :
- 87
- Database :
- Academic Search Index
- Journal :
- Diamond & Related Materials
- Publication Type :
- Academic Journal
- Accession number :
- 130836372
- Full Text :
- https://doi.org/10.1016/j.diamond.2018.05.001