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Preparation and optimization of ZnO films on single-crystal diamond substrate by metal-organic chemical vapour deposition.

Authors :
Zhao, Baijun
Yang, Hongjun
Du, Guotong
Fang, Xiujun
Liu, Dali
Gao, Chunxiao
Liu, Xizhe
Xie, Bin
Source :
Semiconductor Science & Technology. Jun2004, Vol. 19 Issue 6, p770-773. 4p.
Publication Year :
2004

Abstract

High-quality ZnO thin films have been grown on single-crystal diamond substrates with (111) orientation, by low-pressure metal-organic chemical vapour deposition. X-ray diffraction spectra and photoluminescence (PL) spectra clearly showed that the quality of ZnO films was improved by the two-step growth method. Strong ultraviolet emissions and weak deep-level emissions with different intensity were both observed in the room-temperature PL spectrum. The change of surface morphology was also studied by atomic force microscopy. Zn and O elements in the deposited ZnO/diamond films were investigated by x-ray photoelectron spectroscopy, in which the statistical result of the ratio for O/Zn atoms of samples was about 1. Raman scattering was performed at room temperature. The E2, A1(TO) and E1(TO) mode peaks were seen at 437.46, 383 and 414.87 cm-1, which indicated a high crystalline quality for our samples. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
02681242
Volume :
19
Issue :
6
Database :
Academic Search Index
Journal :
Semiconductor Science & Technology
Publication Type :
Academic Journal
Accession number :
13091425
Full Text :
https://doi.org/10.1088/0268-1242/19/6/020