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Structure-Dependent Magnetoresistance in the Zn0.1Cd0.9GeAs2 + MnAs Hybrid Nanocomposite.

Authors :
Arslanov, R. K.
Arslanov, T. R.
Fedorchenko, I. V.
Kilanski, L.
Chatterji, T.
Source :
JETP Letters. May2018, Vol. 107 Issue 10, p612-617. 6p.
Publication Year :
2018

Abstract

The effect of high pressure on electron transport and on the field dependence of the transverse magnetoresistance has been studied in a hybrid nanocomposite based on the Zn0.1Cd0.9GeAs2 matrix and MnAs clusters. A record high negative magnetoresistance of ~74% is formed near a pressure-induced structural transition (P≈ 3.5 GPa). The considered scattering mechanisms include both the contribution from MnAs clusters at relatively low pressures (up to 0.7 GPa) and spin-dependent scattering by localized magnetic moments in the Mn-substituted structure of the matrix in the region of the structural transition. The presence of the positive magnetoresistance region associated with the two-band transport model in the high-pressure phase, as well as the large negative magnetoresistance, is described in the framework of the semiempirical Khosla-Fischer expression. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00213640
Volume :
107
Issue :
10
Database :
Academic Search Index
Journal :
JETP Letters
Publication Type :
Academic Journal
Accession number :
130918425
Full Text :
https://doi.org/10.1134/S0021364018100041