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Identification and modulation of electronic band structures of single-phase β-(AlxGa1−x)2O3 alloys grown by laser molecular beam epitaxy.
- Source :
-
Applied Physics Letters . 7/23/2018, Vol. 113 Issue 4, pN.PAG-N.PAG. 5p. 1 Chart, 5 Graphs. - Publication Year :
- 2018
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Abstract
- Understanding the band structure evolution of (AlxGa1−x)2O3 alloys is of fundamental importance for developing Ga2O3-based power electronic devices and vacuum ultraviolet super-radiation hard detectors. Here, we report on the bandgap engineering of β-(AlxGa1−x)2O3 thin films and the identification of compositionally dependent electronic band structures by a combination of absorption spectra analyses and density functional theory calculations. Single-monoclinic β-phase (AlxGa1−x)2O3 (0 ≤ x ≤ 0.54) films with a preferred (−201) orientation were grown by laser molecular beam epitaxy with tunable bandgap ranging from 4.5 to 5.5 eV. The excellent fitting of absorption spectra by the relation of (αhν)1/2∝ (hν-E) unambiguously identifies that β-(AlxGa1−x)2O3 alloys are indirect bandgap semiconductors. Theoretical calculations predict that the indirect nature of β-(AlxGa1−x)2O3 becomes more pronounced with increased Al composition due to the increased eigenvalue energy gap between M and Г points in the valence band. The experimentally determined indirect bandgap exhibits almost a linear relationship with Al composition, which is consistent with the theoretical calculation and indicates a small bowing effect and a good miscibility. The identification and modulation of (AlxGa1−x)2O3 band structures allows rational design of ultra-wide bandgap oxide heterostructures for the applications in power electronics and solar-blind or X-ray detection. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 113
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 130962690
- Full Text :
- https://doi.org/10.1063/1.5027763