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High-temperature thermal annealing of nonpolar (1 0 [formula omitted] 0) AlN layers sputtered on (1 0 [formula omitted] 0) sapphire.
- Source :
-
Journal of Crystal Growth . Sep2018, Vol. 498, p377-380. 4p. - Publication Year :
- 2018
-
Abstract
- Thermal annealing at high temperatures of nonpolar (1 0 1 ¯ 0) m -plane AlN layers directly sputtered on m -plane sapphire was investigated. The crystallinity of the layers increased with increasing annealing temperature. The full-width at half maximum of the symmetric (1 0 1 ¯ 0) X-ray rocking curves along [0 0 0 1]/[1 1 2 ¯ 0 ] AlN decreased from about 3.5/2.0 ° to 0.24/0.19 ° . The density of basal stacking faults of the annealed layers was found to decrease from ∼ 1 × 10 5 to ∼ 5 × 10 3 cm −1 . The annealed layers had a larger optical bandgap energy than the as-sputtered layers due to their better crystallinity and structural order. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 498
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 131111512
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2018.07.015