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Microsecond Valley Lifetime of Defect-Bound Excitons in Monolayer WSe2.
- Source :
-
Physical Review Letters . 8/3/2018, Vol. 121 Issue 5, p1-1. 1p. - Publication Year :
- 2018
-
Abstract
- In atomically thin two-dimensional semiconductors such as transition metal dichalcogenides (TMDs), controlling the density and type of defects promises to be an effective approach for engineering light-matter interactions. We demonstrate that electron-beam irradiation is a simple tool for selectively introducing defect-bound exciton states associated with chalcogen vacancies in TMDs. Our first-principles calculations and time-resolved spectroscopy measurements of monolayer WSe2 reveal that these defect-bound excitons exhibit exceptional optical properties including a recombination lifetime approaching 200 ns and a valley lifetime longer than 1 μs. The ability to engineer the crystal lattice through electron irradiation provides a new approach for tailoring the optical response of TMDs for photonics, quantum optics, and valleytronics applications. [ABSTRACT FROM AUTHOR]
- Subjects :
- *TUNGSTEN compounds
*SEMICONDUCTORS
*TRANSITION metals
Subjects
Details
- Language :
- English
- ISSN :
- 00319007
- Volume :
- 121
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Physical Review Letters
- Publication Type :
- Academic Journal
- Accession number :
- 131137320
- Full Text :
- https://doi.org/10.1103/PhysRevLett.121.057403