Cite
Effect of Green Quantum Well Number on Properties of Green GaN-Based Light-Emitting Diodes.
MLA
Zhi-Hui Wang, et al. “Effect of Green Quantum Well Number on Properties of Green GaN-Based Light-Emitting Diodes.” Chinese Physics Letters, vol. 35, no. 8, Aug. 2018, p. 1. EBSCOhost, https://doi.org/10.1088/0256-307X/35/8/087302.
APA
Zhi-Hui Wang, Xiao-Lan Wang, Jun-Lin Liu, Jian-Li Zhang, Chun-Lan Mo, Chang-Da Zheng, Xiao-Ming Wu, Guang-Xu Wang, & Feng-Yi Jiang. (2018). Effect of Green Quantum Well Number on Properties of Green GaN-Based Light-Emitting Diodes. Chinese Physics Letters, 35(8), 1. https://doi.org/10.1088/0256-307X/35/8/087302
Chicago
Zhi-Hui Wang, Xiao-Lan Wang, Jun-Lin Liu, Jian-Li Zhang, Chun-Lan Mo, Chang-Da Zheng, Xiao-Ming Wu, Guang-Xu Wang, and Feng-Yi Jiang. 2018. “Effect of Green Quantum Well Number on Properties of Green GaN-Based Light-Emitting Diodes.” Chinese Physics Letters 35 (8): 1. doi:10.1088/0256-307X/35/8/087302.