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Effect of structural disorder on transport properties of LaNiO3 thin films.
- Source :
-
Journal of Applied Physics . 2018, Vol. 124 Issue 6, pN.PAG-N.PAG. 6p. 1 Chart, 6 Graphs. - Publication Year :
- 2018
-
Abstract
- We have deposited LaNiO3 thin films on LaAlO3 (001), SrTiO3 (001), and Si (001) substrates using the pulsed laser deposition technique. Depositions were carried out at various substrate temperatures ranging from 0 to 800 °C. The effects of lattice mismatch and structural disorder on the transport properties of films deposited on various substrates and at different substrate temperatures are reported. X-ray diffraction confirms a highly c-axis oriented growth of LaNiO3 films on all the substrates at substrate temperatures of 600 and 800 °C, while at lower substrate temperatures deposited films are amorphous. Emergence of a new Raman mode indicates symmetry lowering in all the deposited crystalline films. Hardening of the Eg(3) (∼400 cm−1) mode is also observed with the rise of in-plane compressive strain. Resistivity curves for films on Si show a semiconducting behaviour and follow a variable range hopping mechanism. Crystalline films on LaAlO3 and SrTiO3 exhibit a metallic character along with a low-temperature resistivity upturn, which is attributed to the contribution of self-localization to resistivity at low temperatures as indicated by magnetotransport measurements. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 124
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 131234159
- Full Text :
- https://doi.org/10.1063/1.5041921