Electric field effects on nonlinear optical rectification in symmetric coupled AlxGa1−xAs/GaAs quantum wells.

Nonlinear optical rectification in symmetric coupled Al x Ga 1−x As/GaAs quantum wells with external electric field is investigated using numerical method and compact density matrix approach. Our results reveal that for the resonant peaks of optical rectification, a blue shift is exhibited for increasing electric field, while a red shift followed by a blue shift is exhibited for increasing barrier or well widths. The resonant peak values of optical rectification can reach a maximum value by an appropriate choice for the electric field, the barrier or well widths. Our studies pave the way for the design, optimization and applications of quantum-sized nonlinear optoelectronic devices. [ABSTRACT FROM AUTHOR]