A critical re-examination on conduction processes in gas-insulated DC devices at low electric fields.

The established theories behind low-field ion-drift currents assume that the charge generation from natural ionization is the main source of the charge-carriers, and that it defines the current flowing through the insulation gas in gas-insulated direct current (DC) devices. This charge generation is assumed to be independent of the applied electric field in the cases where the electric field is sufficiently below the onset of microdischarges at the interfaces. However, the results of a few previous studies have suggested the presence of a field-dependent current contribution from some conduction processes, which might significantly accelerate the decay of the surface charges distributed on the insulator surfaces. In this paper, an extensive study on low-field charge transport is presented, and the influences of the insulation volume, electric field, and gas pressure on low-field charge transport are discussed. In accordance with the common structure employed in gas-insulated devices, Al2O3-filled epoxy resin is used in the solid parts of the device and sulfur hexafluoride (SF6) is used for gaseous insulation. At electric fields of approximately 1800 V/m, a gas current that is up to 30 times higher, when compared to the conduction currents caused by the charge generation from natural ionization, is observed. This enhanced current reveals a further conduction process acting in a limited range of low electric fields and is characterized to be independent of the applied voltage polarity. With an increase in the gas pressure, the current amplitude is found to increase linearly and higher electric field is required to reach its maximum. At electric fields below 200 V/m, the conduction current reverses its pressure dependency and increases with decreasing gas pressure. The reported findings strongly indicate that the enhanced low-field charge transport in gasinsulated devices may be owing to electrophoretic conduction. [ABSTRACT FROM AUTHOR]