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Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE.
- Source :
-
Journal of Crystal Growth . Oct2018, Vol. 499, p40-46. 7p. - Publication Year :
- 2018
-
Abstract
- AlN epilayer properties (120 nm thick) grown by ammonia assisted molecular beam epitaxy on c-sapphire substrates with different low temperature AlN buffer layers (LT-BL) have been studied. The role of the LT-BL on the AlN structural and optical properties was investigated as a function of the LT-BL thickness and growth temperature. Optimum growth conditions were identified with LT-BL thickness of 3 nm and growth temperature between 480 °C and 520 °C. It was shown that by optimizing these conditions, a reduction of both mixed and edge threading dislocation densities up to 75% is achieved. The impact of the growth temperature of the AlN epilayer was also studied showing an additional improvement of the AlN crystal and morphological properties while growing at higher temperature. A correlation between the epilayer strain and the PL emission was also investigated. Finally, an Al 0.7 Ga 0.3 N:Si doped layer was grown on the top of the optimized AlN template showing a smooth surface with monoatomic steps and a roughness ∼0.2 nm, confirming the potential of such templates for the fabrication of AlGaN based heterostructures. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 499
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 131252028
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2018.07.023