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A Miniature 300-MHz Resonant DC–DC Converter With GaN and CMOS Integrated in IPD Technology.
- Source :
-
IEEE Transactions on Power Electronics . Nov2018, Vol. 33 Issue 11, p9656-9668. 13p. - Publication Year :
- 2018
-
Abstract
- A 300-MHz class-E dc–dc converter using the resonant gate driving technique is proposed. The gate driver utilizes the harmonic shaping network and RC feedback to enhance the output swing voltage, and the class-E power converter can minimize the voltage–current overlap to improve efficiency. With the $0.\text{25-}{\mu} {\text{m}}$ GaN high-electron-mobility transistor and $\text{0.18-}{\mu} {\text{m}}$ CMOS for the switching power device and the gate driver, respectively, a complete dc–dc converter operating at 300 MHz is demonstrated including all the passive components microfabricated by integrated passive device (IPD) technology on the high-resistivity silicon substrate. The overall chip area is smaller than 1 cm × 1 cm and the volume is only 0.115 cm3. The measured results show a maximum output power of 4.16 W with 47.3% efficiency. An excellent power density of 36.2 W/cm3 can be achieved. The flip-chip assembled converter on the IPD substrate demonstrates the potential of heterogeneous integration for high-frequency power conversion applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 08858993
- Volume :
- 33
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Power Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 131289044
- Full Text :
- https://doi.org/10.1109/TPEL.2017.2788946