Cite
An Improved Compact Model for a Silicon-Carbide MOSFET and Its Application to Accurate Circuit Simulation.
MLA
Mukunoki, Yasushige, et al. “An Improved Compact Model for a Silicon-Carbide MOSFET and Its Application to Accurate Circuit Simulation.” IEEE Transactions on Power Electronics, vol. 33, no. 11, Nov. 2018, pp. 9834–42. EBSCOhost, https://doi.org/10.1109/TPEL.2018.2796583.
APA
Mukunoki, Y., Konno, K., Matsuo, T., Horiguchi, T., Nishizawa, A., Kuzumoto, M., Hagiwara, M., & Akagi, H. (2018). An Improved Compact Model for a Silicon-Carbide MOSFET and Its Application to Accurate Circuit Simulation. IEEE Transactions on Power Electronics, 33(11), 9834–9842. https://doi.org/10.1109/TPEL.2018.2796583
Chicago
Mukunoki, Yasushige, Kentaro Konno, Tsubasa Matsuo, Takeshi Horiguchi, Akinori Nishizawa, Masaki Kuzumoto, Makoto Hagiwara, and Hirofumi Akagi. 2018. “An Improved Compact Model for a Silicon-Carbide MOSFET and Its Application to Accurate Circuit Simulation.” IEEE Transactions on Power Electronics 33 (11): 9834–42. doi:10.1109/TPEL.2018.2796583.