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Total-Ionizing-Dose Effects on Al/SiO2 Bimorph Electrothermal Microscanners.
- Source :
-
IEEE Transactions on Nuclear Science . Aug2018, Vol. 65 Issue 8, p2260-2267. 8p. - Publication Year :
- 2018
-
Abstract
- Total-ionizing-dose effects on electrothermal micro- scanners are investigated using 10-keV X-rays and 14.3-MeV oxygen ions. The corresponding changes in mechanical displacement are measured using an optical microscope. Applied dc voltage and/or radiation-induced charging lead to changes in the vertical position and resistance of the structures. Radiation-induced changes in the vertical position and resistance and postirradiation recovery or superrecovery of these quantities are sensitive to dc biases applied during and/or after irradiation. Simple electrostatic and computational models are qualitatively consistent with observed trends in device response. [ABSTRACT FROM AUTHOR]
- Subjects :
- *IRRADIATION
*ACTUATORS
*OPTICAL microscopes
*TEMPERATURE
*OXYGEN
Subjects
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 65
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 131346400
- Full Text :
- https://doi.org/10.1109/TNS.2018.2853139