Effect of Indium doping on the photoelectric properties of n-ZnO nanorods/p-GaN heterojunction light-emitting diodes.

Indium doped ZnO nanorods had been synthesized on p-GaN films by hydrothermal method at low temperature. The microstructure and morphology would be significantly affected by In doping. With increasing In doping concentration, the average diameter increased and the number of nanorods per area decreased. At the same time, the incorporation of In also affected the optical properties of ZnO nanorods. There was a slight red-shift of UV emission peak related to the combined effect of energy shift and Band-Gap-Renormalization effect. And the intensity of visible emission peak increased due to the increasing oxygen vacancies by In doping. What's more, In doping could shorten the band gap of ZnO. Finally, n-ZnO/p-GaN heterojunction Light-emitting diodes had better conductivity with the increase of In doping concentration. [ABSTRACT FROM AUTHOR]