Feedback and tunneling operations of a p +-i-n + silicon nanowire field-effect transistor.

In this paper, we describe the feedback and tunneling operations of a dual top gate field-effect transistor (FET) with a p+-i-n+ doped silicon nanowire channel. The transistor functions selectively in either a feedback FET (FBFET) or a tunneling FET mode by modulating the source-to-drain voltage, and it features an outstanding subthreshold swing characteristic of 6.15 mV dec–1 with an on/off current ratio (Ion/Ioff) of approximately 106 in the feedback operating mode and of 41.3 mV dec–1 with Ion/Ioff of ∼107 in the tunneling operating mode. Moreover, our device in the FBFET operation mode has memory characteristics with a retention time of 104 s and a program/erase endurance up to 103 cycles owing to the positive feedback loop in the channel region. This study demonstrates the promising potential of our devices in the development of multifunctional electronics. [ABSTRACT FROM AUTHOR]