AgSbS2 thin film fabricated by in-situ gas-solid reaction and employed in solar cells as a light absorber.

Highlights • In-situ gas-solid reaction for fabrication of AgSbS 2 thin films. • Phase-pure AgSbS 2 was obtained without impurities. • AgSbS 2 films with excellent photoresponse and photostability. Abstract This work reports the fabrication of AgSbS 2 semiconductor films via in-situ gas-solid reaction approach, including sequential solution-deposition of AgNO 3 and SbCl 3 percursor solutions on mesoporous TiO 2 substrates, and subsequent sulfurization of the prepared films at H 2 S atmosphere. The resultant TiO 2 /AgSbS 2 films show broad spectral absorption ranged from 350 nm to 800 nm with a band gap of 2.01 eV. X-ray photoelectron spectroscopy (XPS) spectra confirm the fabrication of phase-pure AgSbS 2 without any impurity. Furthermore, the devices with a structure of fluorine-doped SnO 2 (FTO)/TiO 2 /AgSbS 2 /Au have been prepared, exhibiting quick interfacial charge transfer and electron injection process with excellent photoresponse and high photostability. [ABSTRACT FROM AUTHOR]