Retraction notice to "High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy" [Journal of Crystal Growth, 366 (2013) 35-38].

Subjects

Subjects :

*CRYSTAL growth
*ORGANOMETALLIC compounds

Details

Language :

English

ISSN :

00220248

Volume :

503

Database :

Academic Search Index

Journal :

Journal of Crystal Growth

Publication Type :

Academic Journal

Accession number :

132288854

Full Text :

https://doi.org/10.1016/j.jcrysgro.2018.09.044