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MoO3/BiVO4 heterojunction film with oxygen vacancies for efficient and stable photoelectrochemical water oxidation.
- Source :
-
Journal of Materials Science . Jan2019, Vol. 54 Issue 1, p671-682. 12p. - Publication Year :
- 2019
-
Abstract
- Poor charge transfer and separation rate are the major bottlenecks for the activity and stability of BiVO4 photoanode. Here, we introduced oxygen vacancies into MoO3/BiVO4 heterojunction film by post-annealing the film in argon-saturated environment for improving its photoelectrochemical (PEC) water oxidation activity and stability. In comparison with the normal MoO3/BiVO4 film, the MoO3/BiVO4 film with oxygen vacancies is of better PEC water oxidation performance. Specifically, a higher photocurrent density of 4.1 mA/cm2 in 0.1 M Na2SO4 at 1.1 V versus SCE was achieved on the MoO3/BiVO4 film with oxygen vacancies, which is about 200% improved over the normal MoO3/BiVO4 film (1.83 mA cm−2, at 1.1 V versus SCE). In addition, the MoO3/BiVO4 film with oxygen vacancies shows more stable activity and faster kinetics for water oxidation, without significant activity loss for 5 h reaction at 1.23 V versus RHE. The enhanced performance on such a MoO3/BiVO4 film photoanode can be attributed to that the oxygen vacancies accelerate the charge transfer and separation rate between film/electrolyte interface, and thus improve the water oxidation activity and restrain the anodic photocorrosion simultaneously. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00222461
- Volume :
- 54
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of Materials Science
- Publication Type :
- Academic Journal
- Accession number :
- 132400551
- Full Text :
- https://doi.org/10.1007/s10853-018-2863-6