Cite
Laser molecular beam epitaxy growth of porous GaN nanocolumn and nanowall network on sapphire (0001) for high responsivity ultraviolet photodetectors.
MLA
Ramesh, Ch., et al. “Laser Molecular Beam Epitaxy Growth of Porous GaN Nanocolumn and Nanowall Network on Sapphire (0001) for High Responsivity Ultraviolet Photodetectors.” Journal of Alloys & Compounds, vol. 770, Jan. 2019, pp. 572–81. EBSCOhost, https://doi.org/10.1016/j.jallcom.2018.08.149.
APA
Ramesh, C., Tyagi, P., Bhattacharyya, B., Husale, S., Maurya, K. K., Kumar, M. S., & Kushvaha, S. S. (2019). Laser molecular beam epitaxy growth of porous GaN nanocolumn and nanowall network on sapphire (0001) for high responsivity ultraviolet photodetectors. Journal of Alloys & Compounds, 770, 572–581. https://doi.org/10.1016/j.jallcom.2018.08.149
Chicago
Ramesh, Ch., P. Tyagi, Biplab Bhattacharyya, Sudhir Husale, K.K. Maurya, M. Senthil Kumar, and S.S. Kushvaha. 2019. “Laser Molecular Beam Epitaxy Growth of Porous GaN Nanocolumn and Nanowall Network on Sapphire (0001) for High Responsivity Ultraviolet Photodetectors.” Journal of Alloys & Compounds 770 (January): 572–81. doi:10.1016/j.jallcom.2018.08.149.