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Effect of Cr substitution on ferrimagnetic and ferroelectric properties of GaFeO3 epitaxial thin films.

Authors :
Osakabe, Takuya
Yasui, Shintaro
Hamasaki, Yosuke
Rao, Badari Narayana
Itoh, Mitsuru
Katayama, Tsukasa
Zhang, Minghui
Source :
Applied Physics Letters. 10/15/2018, Vol. 113 Issue 16, pN.PAG-N.PAG. 4p. 4 Graphs.
Publication Year :
2018

Abstract

To control the properties of multiferroic materials, substitution of magnetic elements is a useful technique. In this study, we fabricated GaCrxFe1−xO3 and Ga1−yCryFeO3 films by substituting Cr3+ (3d3) ions in GaFeO3 for magnetic Fe3+ (3d5) and nonmagnetic Ga3+ (d10) sites, respectively. The effect of the Cr substitution on the magnetic and dielectric properties was systematically investigated. The obtained GaCrxFe1−xO3 and Ga1−yCryFeO3 films (x ≤ 1/4 and y ≤ 1/2) simultaneously exhibit ferrimagnetism and ferroelectricity. For the GaCrxFe1−xO3 films, the magnetic transition temperature (TC) and magnetic anisotropy decrease with increasing x. On the other hand, for the Ga1−yCryFeO3 films, TC increases with increasing y. Unlike the GaFeO3 film, the Cr-substituted GFO films show a peak in the magnetization versus temperature curves and exhibit a sudden decrease in the coercive field near the peak, probably due to the formation of Fe3+–O–Cr3+ coupling which prefers to form ferromagnetic interactions in the antiferromagnetic Fe3+–O–Fe3+ networks. Furthermore, we found that the Cr-substituted GaFeO3 films show out-of-plane ferroelectricity at room temperature. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
113
Issue :
16
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
132513999
Full Text :
https://doi.org/10.1063/1.5029442