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Chain of magnetic tunnel junctions as a spintronic memristor.
- Source :
-
Journal of Applied Physics . 2018, Vol. 124 Issue 15, pN.PAG-N.PAG. 6p. 7 Graphs. - Publication Year :
- 2018
-
Abstract
- In the context of neuromorphic computation, spintronic memristors are investigated for their use as synaptic weights. In this paper, we propose and experimentally demonstrate a resistive synaptic device based on ten magnetic tunnel junctions (MTJs) connected in a serial configuration. Our device exhibits multiple resistance levels that support its use as a synaptic element. It allows for two operating knobs: external magnetic field and voltage pulses (Spin-Transfer Torque). Moreover, it can be operated in different ways. When varying continuously the amplitude of the voltage pulse and/or the magnetic field, eleven resistance states can be reached. In contrast, if the initial state of the chain is reset between every step, a very large number of levels are reached. Ideally, a total of 2 N resistance levels could be accessible. This coincides well with the desired analog-like behavior in ideal memristors. Since this device consists of a scalable number of N MTJs, and MTJ technology is continuously optimized and improved, the proposed memristor shows promise as a scalable synapse solution for neuromorphic hardware implementations. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 124
- Issue :
- 15
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 132514042
- Full Text :
- https://doi.org/10.1063/1.5042431