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Challenges & Physical Insights Into the Design of Fin-Based SCRs and a Novel Fin-SCR for Efficient On-Chip ESD Protection.
- Source :
-
IEEE Transactions on Electron Devices . Nov2018, Vol. 65 Issue 11, p4755-4763. 9p. - Publication Year :
- 2018
-
Abstract
- This paper presents the detailed physical insights into the silicon-controlled rectifier (SCR) phenomena in planar equivalent Fin SCR devices. The complexity and roadblocks for SCR triggering in FinFET technology are explored. Implication of contact silicidation on Fin SCR turn- ON is discussed in detail. Device design approaches are discussed for efficient Fin-enabled SCRs. In this direction, a novel contact engineering scheme in Fin technology is disclosed for improved SCR action. Moreover, a novel Fin SCR is presented, which offers area-efficient electrostatic discharge current carrying capability. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 65
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 132546204
- Full Text :
- https://doi.org/10.1109/TED.2018.2869630