Investigation of inhomogeneous barrier height for Au/n-type 6H-SiC Schottky diodes in a wide temperature range.

Abstract Curent-Voltage (I-V) properties of Au/6H-SiC/Au Schottky diodes are investigated and results are analised dependent on temperature at 80–400 K range. Fundamental parameters such as ideality factors (n), barrier heights (Φ b0), saturation currents (I 0) are calculated for this diode. Also, series resistance (R s) is calculated with different methods. Richardson curves are plotted for this structure and Richardson constant (A∗) is calculated. Results are compared with literature. Gaussian distribution is examined by using barrier inhomogeneity. Parameters belonging to Gaussian disribution are calculated and results are compared with previous studies done by different authors. Highlights • This article is original and it is written with great care. 6H-SiC is a very important material to be investigated in electronical terms. • Electric properties of Au/n-6H-SiC/Au Schottky barrier diode is investigated in 80–400 K temperature range. • Barrier height values from current-voltage data are 0.22 eV and 0.775 eV at 80 and 400 K respectively. • Ideality factor values are 6.4 and 1.8 at the same temperatures respectively. Barrier height value increase and ideality factor value decrease with an increase in temperature. [ABSTRACT FROM AUTHOR]