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Effect of Quantum Dot Scattering and Absorption on the Optical Performance of White Light-Emitting Diodes.

Authors :
Li, Jia-Sheng
Tang, Yong
Li, Zong-Tao
Ding, Xin-Rui
Rao, Long-Shi
Yu, Bin-Hai
Source :
IEEE Transactions on Electron Devices. Jul2018, Vol. 65 Issue 7, p2877-2884. 8p.
Publication Year :
2018

Abstract

Quantum dots (QDs) show a great potential for light-emitting diodes (LEDs) packaging, which still face great challenges compared with the matured phosphor downconversion materials. These are probably caused by the unique scattering and absorption properties of QDs, which are extremely different to the traditional phosphor due to their several nanometers size, while their effect on QDs-converted LEDs (QCLEDs) is barely studied. In this paper, we have experimentally and theoretically investigated the effect of scattering and absorption of CdSe/ZnS QDs on the optical performance for QCLEDs by comparing with the traditional yttrium aluminum garnet phosphor. Results indicate that the strong absorption (reabsorption) of QDs causes low radiant efficacy and stability for QCLEDs; their weak scattering also leads to a low color uniformity. It demonstrates that their unique scattering and absorption properties are key factors leading to low optical performance of QCLEDs compared with the traditional phosphor-converted LEDs. For purpose of gaining the white LED with high efficiency and stability, it is highly suggested to use a low QD concentration to reduce the reabsorption loss and the total internal reflection loss. We believe that this paper can provide a better understanding of improving the optical performance for QCLEDs from the prospective of scattering and absorption. In the future, it is important to use low QD concentration to gain high-performance white LEDs with high downconversion efficiency by optimizing packaging structures. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189383
Volume :
65
Issue :
7
Database :
Academic Search Index
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
132684284
Full Text :
https://doi.org/10.1109/TED.2018.2830798