Cite
Abnormal Volatile Memory Characteristic in Normal Nonvolatile ZnSnO Resistive Switching Memory.
MLA
Hsu, Chih-Chieh, et al. “Abnormal Volatile Memory Characteristic in Normal Nonvolatile ZnSnO Resistive Switching Memory.” IEEE Transactions on Electron Devices, vol. 65, no. 7, July 2018, pp. 2812–19. EBSCOhost, https://doi.org/10.1109/TED.2018.2831906.
APA
Hsu, C.-C., Chen, Y.-T., Chuang, P.-Y., & Lin, Y.-S. (2018). Abnormal Volatile Memory Characteristic in Normal Nonvolatile ZnSnO Resistive Switching Memory. IEEE Transactions on Electron Devices, 65(7), 2812–2819. https://doi.org/10.1109/TED.2018.2831906
Chicago
Hsu, Chih-Chieh, Yu-Ting Chen, Po-Yang Chuang, and Yu-Sheng Lin. 2018. “Abnormal Volatile Memory Characteristic in Normal Nonvolatile ZnSnO Resistive Switching Memory.” IEEE Transactions on Electron Devices 65 (7): 2812–19. doi:10.1109/TED.2018.2831906.