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Material Limit of Power Devices—Applied to Asymmetric 2-D Superjunction MOSFET.
- Source :
-
IEEE Transactions on Electron Devices . Aug2018, Vol. 65 Issue 8, p3326-3332. 7p. - Publication Year :
- 2018
-
Abstract
- In spite of the reporting of several mathematical approaches dealing with the behavior of the superjunction MOSFET’s specific resistance, a study for the asymmetrical pillar (when the width of the n-pillar and the p-pillar are not the same at a given cellpitch) has not been carried out yet. When the width of one of the pillar (say n-pillar) is modified, the doping concentration (say donor) should be changed to maintain a charge balance condition. This in turn, changes the width of the depletion region, due to the parasitic JFET effect and as a result the effective on-state conduction path. This raises the question whether the best tradeoff between the specific on-state resistance and the breakdown voltage could be achieved by employing the conventional assumption of the same width of the n and p pillars. This paper clarifies the best option for the width of each pillar when designing a superjunction MOSFET and adapts the figures of merit to take into account the asymmetrical superjunction cell. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 65
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 132684347
- Full Text :
- https://doi.org/10.1109/TED.2018.2839180