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Transient Performance Analysis and Optimization of Crossbar Memory Arrays Using NbO2-Based Threshold Switching Selectors.
- Source :
-
IEEE Transactions on Electron Devices . Aug2018, Vol. 65 Issue 8, p3214-3220. 7p. - Publication Year :
- 2018
-
Abstract
- Performance of the crossbar memory array highly depends on the selector characteristics. In this paper, rigorous transient analyses are performed for a large-size crossbar memory array using novel NbO2-based selectors with a threshold switching behavior. To enable accurate and efficient array-level simulation, an electrostatic discharge-based compact model is employed to effectively describe the ${I}$ – ${V}$ characteristics of the selector. Multiple key design parameters of the selector are investigated, such as the threshold voltage, leakage current, and intrinsic switching speed. A sensitivity analysis is performed to evaluate the impact of hypothetical improvements in various selector parameters. In addition, the impacts of resistances of interconnect and memory element on the array-level access delay and energy dissipation are quantified. The results show that reducing the threshold voltage of selectors provides the most significant performance improvement, where up to 80% of the energy-delay product saving is observed if the threshold voltage is reduced by 50%. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 65
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 132684403
- Full Text :
- https://doi.org/10.1109/TED.2018.2848844