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Thermal Resistance Characterization for Multifinger SOI-MOSFETs.
- Source :
-
IEEE Transactions on Electron Devices . Sep2018, Vol. 65 Issue 9, p3626-3632. 7p. - Publication Year :
- 2018
-
Abstract
- Thermal conductance in multifinger silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFETs) is usually modeled at room temperature with a linear dependence on the total gate width, which is valid only when thermal coupling saturates. This paper presents a physically based model for calculating the thermal resistance of SOI-MOSFETs that accounts for progressive thermal coupling as the number of fingers increases and the substrate temperature. The model, extracted from a variety of gate geometries using the ac conductance method, correctly predicts the temperature rise in the device channel up to a substrate temperature of 150 °C. Finally, this simple thermal resistance model, which is applicable to nanometer-scale transistors, can easily be added to circuit simulators. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 65
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 132684436
- Full Text :
- https://doi.org/10.1109/TED.2018.2853799