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Influence of Body Effect on Sample-and-Hold Circuit Design Using Negative Capacitance FET.

Authors :
Liang, Yuhua
Li, Xueqing
George, Sumitha
Srinivasa, Srivatsa
Zhu, Zhangming
Gupta, Sumeet Kumar
Datta, Suman
Narayanan, Vijaykrishnan
Source :
IEEE Transactions on Electron Devices. Sep2018, Vol. 65 Issue 9, p3909-3914. 6p.
Publication Year :
2018

Abstract

Negative capacitance FET (NCFET) has become a research topic of interest in recent years due to its interesting properties. It has the ability to retain the polarization state even in the absence of electric field. By virtue of this ability, it can be designed as a nonvolatile memory. NCFET can also be configured as a steep-slope switch and thereby providing energy efficiency while used in digital designs. However, the benefits offered by NCFETs for analog circuit domain has not well reported. In this paper, we analyze the impact of body effect on an NCFET-based bootstrapped switch and illustrate that the linearity of NCFET-based switch can be improved resulting from the internal amplification of the employed NCFET. When designed at 0.6-V supply (${V}_{\text {dd}}$), results show that the variation of the on resistance of the bootstrapped switch is about $67~\Omega $ during the sampling period, which is one-third smaller than the MOSFET-based switch. As a result, the sampling linearity is improved and the distortion at the output can be decreased. On condition that the Nyquist input frequency is 10 MHz, the proposed NCFET-based bootstrapped switch succeeds in improving the total harmonic distortion performance by 16.7 dB, compared with that of a conventional MOSFET-based bootstrapped switch. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189383
Volume :
65
Issue :
9
Database :
Academic Search Index
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
132684464
Full Text :
https://doi.org/10.1109/TED.2018.2852679