Cite
Epitaxial Growth of InGaN Multiple-Quantum-Well LEDs With Improved Characteristics and Their Application in Underwater Optical Wireless Communications.
MLA
Tsai, Chia-Lung, et al. “Epitaxial Growth of InGaN Multiple-Quantum-Well LEDs With Improved Characteristics and Their Application in Underwater Optical Wireless Communications.” IEEE Transactions on Electron Devices, vol. 65, no. 10, Oct. 2018, pp. 4346–52. EBSCOhost, https://doi.org/10.1109/TED.2018.2861892.
APA
Tsai, C.-L., Lu, Y.-C., Yu, C.-M., & Chen, Y.-J. (2018). Epitaxial Growth of InGaN Multiple-Quantum-Well LEDs With Improved Characteristics and Their Application in Underwater Optical Wireless Communications. IEEE Transactions on Electron Devices, 65(10), 4346–4352. https://doi.org/10.1109/TED.2018.2861892
Chicago
Tsai, Chia-Lung, Yi-Chen Lu, Chih-Min Yu, and Yen-Jen Chen. 2018. “Epitaxial Growth of InGaN Multiple-Quantum-Well LEDs With Improved Characteristics and Their Application in Underwater Optical Wireless Communications.” IEEE Transactions on Electron Devices 65 (10): 4346–52. doi:10.1109/TED.2018.2861892.