Cite
A Study on the Impact of Channel Mobility on Switching Performance of Vertical GaN MOSFETs.
MLA
Ji, Dong, et al. “A Study on the Impact of Channel Mobility on Switching Performance of Vertical GaN MOSFETs.” IEEE Transactions on Electron Devices, vol. 65, no. 10, Oct. 2018, pp. 4271–75. EBSCOhost, https://doi.org/10.1109/TED.2018.2864260.
APA
Ji, D., Li, W., & Chowdhury, S. (2018). A Study on the Impact of Channel Mobility on Switching Performance of Vertical GaN MOSFETs. IEEE Transactions on Electron Devices, 65(10), 4271–4275. https://doi.org/10.1109/TED.2018.2864260
Chicago
Ji, Dong, Wenwen Li, and Srabanti Chowdhury. 2018. “A Study on the Impact of Channel Mobility on Switching Performance of Vertical GaN MOSFETs.” IEEE Transactions on Electron Devices 65 (10): 4271–75. doi:10.1109/TED.2018.2864260.