Cite
Failure of Switching Operation of SiC-MOSFETs and Effects of Stacking Faults on Safe Operation Area.
MLA
Fujita, Ryusei, et al. “Failure of Switching Operation of SiC-MOSFETs and Effects of Stacking Faults on Safe Operation Area.” IEEE Transactions on Electron Devices, vol. 65, no. 10, Oct. 2018, pp. 4448–54. EBSCOhost, https://doi.org/10.1109/TED.2018.2864305.
APA
Fujita, R., Tani, K., Konishi, K., & Shima, A. (2018). Failure of Switching Operation of SiC-MOSFETs and Effects of Stacking Faults on Safe Operation Area. IEEE Transactions on Electron Devices, 65(10), 4448–4454. https://doi.org/10.1109/TED.2018.2864305
Chicago
Fujita, Ryusei, Kazuki Tani, Kumiko Konishi, and Akio Shima. 2018. “Failure of Switching Operation of SiC-MOSFETs and Effects of Stacking Faults on Safe Operation Area.” IEEE Transactions on Electron Devices 65 (10): 4448–54. doi:10.1109/TED.2018.2864305.