Back to Search
Start Over
Enhancement of Hydrogen Sensing Performance of a Pd Nanoparticle/Pd Film/GaOx/GaN-Based Metal–Oxide– Semiconductor Diode.
- Source :
-
IEEE Transactions on Electron Devices . Oct2018, Vol. 65 Issue 10, p4577-4584. 8p. - Publication Year :
- 2018
-
Abstract
- A new Pd nanoparticle (NP)/Pd film/GaOx/GaN-based metal–oxide–semiconductor diode hydrogen sensor is fabricated and studied. In this paper, appropriate photochemical drop coating and an H2O2 surface treatment were used to form Pd NPs and a GaOx dielectric layer. The Pd NPs increased the surface area/volume ratio, and the presence of GaOx layer led to the effective dissociation of hydrogen molecules. The improved hydrogen sensing properties include a very high sensing response of $1.24 \times 10^{{7}}$ (in 1% H2/air gas at 300 K) and an extremely low detection level (${\le} 1$ ppm H2/air). Furthermore, based on a kinetic adsorption analysis, the activation energy was only 13.1 $\text {KJ}\cdot \text {mol}^{-{1}}$ that is beneficial for hydrogen sensing. The proposed device is therefore promising for high-performance hydrogen sensing applications. [ABSTRACT FROM AUTHOR]
- Subjects :
- *PALLADIUM
*NANOPARTICLES
*SEMICONDUCTORS
*METALLIC oxides
*DIELECTRIC properties
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 65
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 132684550
- Full Text :
- https://doi.org/10.1109/TED.2018.2865793