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Silicon-Photonic Electro-Optic Phase Modulators Integrating Transparent Conducting Oxides.
- Source :
-
IEEE Journal of Quantum Electronics . Aug2018, Vol. 54 Issue 4, p1-8. 8p. - Publication Year :
- 2018
-
Abstract
- Higher-order digital modulation formats are demonstrated by electrically inducing free-carrier concentration changes in thin films of transparent conducting oxides, integrated into well-established silicon-photonic waveguiding architectures. The proposed near-infrared modulators employ as physical platforms the silicon-rib and silicon-slot waveguides, exploiting the highly dispersive and carrier-dependent epsilon-near-zero behavior of transparent conducting oxides to modulate the optical carrier. Advancing the existing studies on conventional amplitude modulation, phase-shift keying formats are investigated in this paper, using a rigorous and physically consistent modeling framework that seamlessly combines solid-state physics with Maxwell wave theory through carrier-dependent material models. The designed in-line modulators achieve $V_\pi L$ products in the order of 0.1 Vmm, two orders of magnitude lower than their respective all-silicon or lithium niobate counterparts, accompanied by an insertion loss of about $3~\mathrm {dB/\pi }$. Switching speeds in the order of 50 GHz are feasible along with a potential for sub-pJ/symbol energy consumption, meeting the demands for on-chip optical modulation. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189197
- Volume :
- 54
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- IEEE Journal of Quantum Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 132684925
- Full Text :
- https://doi.org/10.1109/JQE.2018.2852144