Bandlike and localized states of extended defects in n-type In0.53Ga0.47As.

MLA

Hsu, Po-Chun (Brent), et al. “Bandlike and Localized States of Extended Defects in N-Type In0.53Ga0.47As.” Journal of Applied Physics, vol. 124, no. 16, Oct. 2018, p. N.PAG. EBSCOhost, https://doi.org/10.1063/1.5046827.

APA

Hsu, P.-C. (Brent), Simoen, E., Merckling, C., Eneman, G., Mols, Y., Alian, A., Langer, R., Collaert, N., & Heyns, M. (2018). Bandlike and localized states of extended defects in n-type In0.53Ga0.47As. Journal of Applied Physics, 124(16), N.PAG. https://doi.org/10.1063/1.5046827

Chicago

Hsu, Po-Chun (Brent), Eddy Simoen, Clement Merckling, Geert Eneman, Yves Mols, AliReza Alian, Robert Langer, Nadine Collaert, and Marc Heyns. 2018. “Bandlike and Localized States of Extended Defects in N-Type In0.53Ga0.47As.” Journal of Applied Physics 124 (16): N.PAG. doi:10.1063/1.5046827.