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Temperature dependent electron transport and inelastic electron tunneling spectroscopy of porphyrin molecular junctions.

Authors :
Esposito, Teresa
Dinolfo, Peter H.
Lewis, Kim Michelle
Source :
Organic Electronics. Dec2018, Vol. 63, p58-64. 7p.
Publication Year :
2018

Abstract

Abstract We report electron transport measurements through a metal-molecule-metal junction of free base or zinc porphyrin molecules. Junctions are formed by zig-zag electromigration of a gold nanowire. Inelastic electron tunneling spectroscopy measurements were performed at 4.3 K to confirm the presence of molecules in the junction and to measure the vibrational modes of the molecular junction. Temperature dependent current/voltage measurements are performed in order to determine that the electron conduction mechanism through these molecular junctions is direct tunneling. The electron attenuation coefficient ( β 0 ) was also calculated; the average β 0 for free base and zinc porphyrin was 0.231 ± 0.133 Å−1 and 0.188 ± 0.049 Å−1, respectively. The barrier height was experimentally found to be 1.6 eV and 1.1 eV for FBP and Zn-P SAMs on Au, respectively. Graphical abstract Image 1 Highlights • IETS measurements are reported for electromigrated porphyrin molecular junctions and compared to molecular vibrational modes. • The electron conduction mechanism through the molecular junctions was identified as direct tunneling. • The electron attenuation coefficient calculated was 0.231 ± 0.133 Å-1 for free base porphyrin and 0.188 ± 0.049 Å-1 for Zn-P. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
15661199
Volume :
63
Database :
Academic Search Index
Journal :
Organic Electronics
Publication Type :
Academic Journal
Accession number :
132854588
Full Text :
https://doi.org/10.1016/j.orgel.2018.08.040