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High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen.
- Source :
-
Applied Physics Letters . 11/5/2018, Vol. 113 Issue 19, pN.PAG-N.PAG. 5p. 5 Graphs. - Publication Year :
- 2018
-
Abstract
- Semi-insulating halide vapor phase epitaxial β-Ga2O3 films without intentional dopants introduced during growth are demonstrated. The sheet resistance measured in the 340–480 K range yielded 268–134 kΩ/◻ and an activation energy of 0.81 eV. Room temperature capacitance-voltage measurements at 1 MHz showed evidence of an ultra-low free carrier concentration n-type film with a free carrier concentration near flatband (VFB ∼ 4.4 V) estimated to be <1014 cm−3, resulting in a high breakdown voltage of 2380 V (3.18 MV/cm) measured on a lateral diode without field termination. Secondary ion mass spectroscopy did not reveal Fe compensating species; however, an average Si concentration of about 5 × 1015 cm−3 and an N concentration of about 2 × 1017 cm−3 were detected, suggesting that N acceptors compensated Si donors to result in a nearly intrinsic β-Ga2O3 film. Photoionization spectroscopy suggested the presence of a deep acceptor-like level located at Ec −0.23 eV. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 113
- Issue :
- 19
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 132939960
- Full Text :
- https://doi.org/10.1063/1.5045601