Back to Search
Start Over
Growth of two-dimensional materials on hexagonal boron nitride (h-BN).
- Source :
-
Nanotechnology . 1/18/2019, Vol. 30 Issue 3, p1-1. 1p. - Publication Year :
- 2019
-
Abstract
- With its atomically smooth surface yet no dangling bond, chemical inertness and high temperature sustainability, the insulating hexagonal boron nitride (h-BN) can be an ideal substrate for two-dimensional (2D) material growth and device measurement. In this review, research progress on the chemical growth of 2D materials on h-BN has been summarized, such as chemical vapor deposition and molecular beam epitaxy of graphene and various transition metal dichalcogenides. Further, stacking of the as-grown 2D materials relative to h-BN, thermal expansion matching between the deposited materials and h-BN, electrical property of 2D materials on h-BN have been discussed in detail. [ABSTRACT FROM AUTHOR]
- Subjects :
- *BORON nitride
*HIGH temperatures
*MOLECULAR beam epitaxy
Subjects
Details
- Language :
- English
- ISSN :
- 09574484
- Volume :
- 30
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Nanotechnology
- Publication Type :
- Academic Journal
- Accession number :
- 133087168
- Full Text :
- https://doi.org/10.1088/1361-6528/aaeb70