Back to Search
Start Over
Organic transistor nonvolatile memory with an integrated molecular floating-gate/tunneling layer.
- Source :
-
Applied Physics Letters . 12/10/2018, Vol. 113 Issue 24, pN.PAG-N.PAG. 5p. 1 Diagram, 5 Graphs. - Publication Year :
- 2018
-
Abstract
- Floating-gate based organic field-effect transistor (FG-OFET) nonvolatile memories (NVMs) are demonstrated based on an integrated molecular floating-gate/tunneling layer, in which small molecular fullerene (C60) acting as the floating-gate and long-chain alkane molecule tetratetracontane acting as the tunneling layer are synchronously prepared by vacuum thermal evaporation. The effects of the thickness and the component of the integrated floating-gate/tunneling layer on the performances of memory are investigated. As a result, a high performance FG-OFET NVM is achieved, with a large memory window of 8.0 V on average, stable retention capability over 10 years, and reliable switching endurance over 100 cycles at the programming/erasing voltages of ±40 V, at an optimized condition. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 113
- Issue :
- 24
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 133580811
- Full Text :
- https://doi.org/10.1063/1.5064837