Cite
RF Watt-Level Low-Insertion-Loss High-Bandwidth SOI CMOS Switches.
MLA
Hill, Cameron, et al. “RF Watt-Level Low-Insertion-Loss High-Bandwidth SOI CMOS Switches.” IEEE Transactions on Microwave Theory & Techniques, vol. 66, no. 12, Dec. 2018, pp. 5724–36. EBSCOhost, https://doi.org/10.1109/TMTT.2018.2876825.
APA
Hill, C., Levy, C. S., AlShammary, H., Hamza, A., & Buckwalter, J. F. (2018). RF Watt-Level Low-Insertion-Loss High-Bandwidth SOI CMOS Switches. IEEE Transactions on Microwave Theory & Techniques, 66(12), 5724–5736. https://doi.org/10.1109/TMTT.2018.2876825
Chicago
Hill, Cameron, Cooper S. Levy, Hussam AlShammary, Ahmed Hamza, and James F. Buckwalter. 2018. “RF Watt-Level Low-Insertion-Loss High-Bandwidth SOI CMOS Switches.” IEEE Transactions on Microwave Theory & Techniques 66 (12): 5724–36. doi:10.1109/TMTT.2018.2876825.