Cite
Effect of Interface Layer Engineering on Resistive Switching Characteristics of ZrO2-Based Resistive Switching Devices.
MLA
Li, Yingtao, et al. “Effect of Interface Layer Engineering on Resistive Switching Characteristics of ZrO2-Based Resistive Switching Devices.” IEEE Transactions on Electron Devices, vol. 65, no. 12, Dec. 2018, pp. 5390–94. EBSCOhost, https://doi.org/10.1109/TED.2018.2876942.
APA
Li, Y., Li, X., Fu, L., Chen, R., Wang, H., & Gao, X. (2018). Effect of Interface Layer Engineering on Resistive Switching Characteristics of ZrO2-Based Resistive Switching Devices. IEEE Transactions on Electron Devices, 65(12), 5390–5394. https://doi.org/10.1109/TED.2018.2876942
Chicago
Li, Yingtao, Xiaoyan Li, Liping Fu, Rongbo Chen, Hong Wang, and Xiaoping Gao. 2018. “Effect of Interface Layer Engineering on Resistive Switching Characteristics of ZrO2-Based Resistive Switching Devices.” IEEE Transactions on Electron Devices 65 (12): 5390–94. doi:10.1109/TED.2018.2876942.