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Explicit Model of Channel Charge, Backscattering, and Mobility for Graphene FET in Quasi-Ballistic Regime.
- Source :
-
IEEE Transactions on Electron Devices . Dec2018, Vol. 65 Issue 12, p5468-5474. 7p. - Publication Year :
- 2018
-
Abstract
- Ballistic (collision free) and drift-diffusive (collision dominated) transport mechanisms are both present in graphene, and they together contribute in the current conduction in a graphene FET (GFET). In this paper, we propose an analytical drain current model based on ballistic (${n}_{B}$) and drift-diffusive (${n}_{D}$) charge densities, backscattering coefficient (${R}$), and quasi-ballistic mobility ($\mu _{\text {eff}}$). ${n}_{B}$ is calculated using the McKelvey flux theory and ${n}_{D}$ using the surface potential approach. A closed-form analytical expression is derived for the backscattering coefficient, which is valid under both low and high electric field conditions. The effective quasi-ballistic mobility is obtained by considering both scattering-dominated and scattering free mobilities. The proposed model is well aligned with experimental data, in all regions of operation, for single- and double-gate GFETs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 65
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 133667833
- Full Text :
- https://doi.org/10.1109/TED.2018.2877631