Effect of precursor dopant valence state on the photocatalytic performance of Mo3+- or Mo5+-Doped TiO2 thin films.

Abstract Mo3+- or Mo5+-doped TiO 2 sol-gel thin films (≤0.100 mol%) were spin coated on fused silica glass substrates and annealed at 450 °C for 2 h. The effect of the valence of the dopant precursor is significant to the nanostructural development and resultant properties. Mo3+ or Mo5+ doping yields converse trends with doping level, thus reflecting the competing influences of lattice distortion and destabilization (dominating Mo3+ doping) and nucleation and recrystallization (dominating Mo5+ doping). Mo doping results in oxidation of Mo3+ and reduction of Mo5+, both of which alter to Mo(5−x)+, as well as oxidation of Ti3+ to Ti(4+x)+; all of these result in V O • • annihilation. Although the absorption edges were largely indistinguishable, Mo3+ doping causes a red shift and Mo5+ doping causes a blue shift. These data suggest that the performances are controlled by the synergistic effects of crystallinity, surface area, and band gap, with the latter's exhibiting the dominant effect. This suggests that the defect structure governs the photocatalytic performance but also that the defect chemistry at these low annealing temperatures is indicative of nonequilibrium conditions, thereby explaining the significance of the dopant valence. Highlights • The dominant effects are lattice distortion (Mo3+) and recrystallization (Mo5+). • Charge transfer causes Mo3+ and Ti3+ oxidation, Mo5+ reduction and V O • • removal. • Synergistic effect of crystallinity, surface area, and band gap improved efficiency. [ABSTRACT FROM AUTHOR]