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Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer.
- Source :
-
Applied Physics Letters . 1/1/2019, Vol. 114 Issue 1, pN.PAG-N.PAG. 5p. 1 Color Photograph, 1 Diagram, 3 Graphs. - Publication Year :
- 2019
-
Abstract
- An obvious increase in the gate leakage current has been commonly observed in GaN HEMTs, after Plasma-enhanced chemical vapor deposition (PECVD) SiN passivation has been observed to obviously increase. This paper presents an Al/SiN stack layer passivation structure. The high gate leakage current in GaN HEMTs caused by the PECVD SiN passivation is distinctly reduced by 2 to 3 orders of magnitude by introducing a thin Al layer. It is mainly attributed to the Al layer blocking and minimizing the damage for the (Al)GaN surface in the build-up of the luminance process of PECVD SiN and then reducing the surface trap density. TEM mapping and SRIM software simulation reveal that neither damage nor inter-diffusion is demonstrated at the Al/AlGaN interface, where a continuous crystalline region is observed. The moderate current collapse suppression and 32.8% improvement in VBR are achieved in GaN HEMTs with Al/SiN passivation. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 114
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 134114374
- Full Text :
- https://doi.org/10.1063/1.5077050