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Electronic band structure engineering in InAs/InSbAs and InSb/InSbAs superlattice heterostructures.
- Source :
-
Journal of Applied Physics . 2019, Vol. 125 Issue 2, pN.PAG-N.PAG. 5p. 1 Diagram, 2 Charts, 6 Graphs. - Publication Year :
- 2019
-
Abstract
- We report a detailed ab initio study of two superlattice heterostructures, one component of which is a unit cell of CuPt ordered InSb 0.5 As 0.5 . This alloy part of the heterostructures is a topological semimetal. The other component of each system is a semiconductor, zincblende-InSb, and wurtzite-InAs. Both heterostructures are semiconductors. Our theoretical analysis predicts that the variation in the thickness of the InSb layer in InSb/InSb 0.5 As 0.5 heterostructure renders altered bandgaps with different characteristics (i.e., direct or indirect). The study holds promise for fabricating heterostructures, in which the modulation of the thickness of the layers changes the number of carrier pockets in these systems. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 125
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 134126413
- Full Text :
- https://doi.org/10.1063/1.5056196