Dependence of optimum V/III ratio on substrate orientation, and influence of buffer layer on MOVPE grown InSb/GaSb quantum dots.

Highlights • Misorientation on the (1 0 0) substrate can promote island nucleation. • Lower growth rate is favorable in obtaining an even buffer layer surface. • Corrugated buffer surfaces found to introduce order in the arrangement of the dots. • The troughs on corrugated surface enhances nucleation of 3D islands. • The shape and size of the dots are responsive to the thickness of the buffer layer. Abstract The dependence of optimum V/III ratio on substrate orientation and the influence of buffer layer on the growth of InSb/GaSb quantum dots (QDs) using atmospheric pressure Metalorganic Vapor Phase Epitaxy (MOVPE) are investigated in this study. The misorientation on the (1 0 0) substrate is suggested to enhance the formation of surface steps, which provides low energy growth sites and hence promotes island nucleation. An increase in V/III ratio from 1.0 to 3.0 resulted in a significant reduction in dot density on both (1 0 0) and (1 1 1) substrates, a phenomenon attributed to the reduced number of indium adatoms available on the growth surface, which simultaneously stimulates a decrease in the migration length of indium species. The shape and size of the dots were observed to be sensitive to the thickness of the buffer layer. Likewise, an increase in buffer layer thickness from 50 nm to ∼300 nm shows the onset of surface corrugation for buffer layer thickness of ∼150 nm, which persisted up to a buffer thickness of ∼250 nm. The corrugated buffer surfaces were observed to introduce order in the arrangement of the dots, which formed preferentially inside the troughs. A reduction in growth rate (from 0.21 to 0.17 nm/s) is presumed to induce sufficient adatom migration and strong bonding between the adsorbate atoms which results in an even buffer layer surface due to an enhancement in surface coverage of adatoms. [ABSTRACT FROM AUTHOR]