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Atomic step-flow epitaxy of low defect InGaAs islands on Si(1 1 1) by micro-channel selective area MOVPE.
- Source :
-
Journal of Crystal Growth . Feb2019, Vol. 507, p384-388. 5p. - Publication Year :
- 2019
-
Abstract
- Highlights • Growth of InGaAs nucleation with single domain on Si(1 1 1). • Growth of InGaAs self-aligned pillar on Si(1 1 1). • Significant improvement in InGaAs islands' crystal quality and uniformity. • Unique atomic step patterns on InGaAs (1 1 1) facet by AFM, demonstrating atomic layer by layer growth. • Free of threading dislocation. Abstract We report successful growth of threading dislocation free InGaAs island arrays on masked Si(1 1 1) substrate by micro-channel selective area growth (MC-SAG). Developed from InGaAs/InAs/Si growth scheme (Deura et al., 2009) [1], InGaAs nucleation and pillar layer are originally introduced before the lateral growth in order to reduce the InGaAs/InAs lattice mismatch, leading to significant improvement in both crystal quality and uniformity. Unique atomic step patterns along 〈1 1 0〉 directions are observed on InGaAs (1 1 1) facet by AFM, demonstrating atomic layer by layer growth. No threading dislocation is detected. This scheme can be a very promising approach for high level III-V on Si integration. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 507
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 134148974
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2018.11.036